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Electronic structures for InxGa1-xAs nanowires with [100], [110], and [111]orientations and critical dimensions of approximately 2 nm are treated withinthe framework of density functional theory. Explicit band structures arecalculated and properties relevant to nanoelectronic design are extractedincluding band gaps, effective masses, and density of states. The properties ofthese III-V nanowires are compared to silicon nanowires of comparabledimensions as a reference system. In nonpolar semiconductors, quantumconfinement and surface chemistry are known to play a key role in thedetermination of nanowire electronic structure. InxGa1-xAs nanowires have inaddition effects due to alloy stoichiometry on the cation sublattice and due tothe polar nature of the cleaved nanowire surfaces. The impact of theseadditional factors on the electronic structure for these polar semiconductornanowires is shown to be significant and necessary for accurate treatment ofelectronic structure properties.

Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires