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Presently, cerium-doped LaMnO$_3$ is vividly discussed as an electron-dopedcounterpart prototype to the well-established hole-doped mixed-valencemanganites. Here, La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of differentthicknesses, degrees of CeO$_2$ phase segregation, and oxygen deficiency, grownon SrTiO$_3$ single crystal substrates, are compared with respect to theirresistance-vs.-temperature (R vs. T) behavior from 300~K down to 90~K. Whilethe variation of the film thickness (and thus the degree of epitaxial strain)in the range between 10~nm and 100~nm has only a weak impact on the electricaltransport, the degree of oxygen deficiency as well as the existence of CeO$_2$clusters can completely change the type of hopping mechanism. This is shown byfitting the respective \textit{R-T} curves with three different transportmodels (adiabatic polaron hopping, Mott variable-range hopping,Efros-Shklovskii variable-range hopping), which are commonly used for themixed-valence manganites. Several characteristic transport parameters, such asthe hopping energies, the carrier localization lengths, as well as the Mnvalences are derived from the fitting procedures.

journal of physics and chemistry of solids

Electrical-transport characteristics of as-grown and oxygen-reduced  La$_{0.7}$Ce$_{0.3}$MnO$_3$ films: calculation of hopping energies, Mn  valences, and carrier localization lengths