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We theoretically study the spin current and spin-transfer torque generationin a conventional spin- valve hybrid structure of type ferromagnetic/normalmetal/ferromagnetic (FM/NM/FM) made of the topological insulator (TI), in whicha gate voltage is attached to the normal layer. We demonstrate the penetrationof the spin-transfer torque into the right ferromagnetic layer and show that,unlike graphene spin-valve junction, the spin-transfer torque in TI is verysensitive to the chemical potential of the NM region. As an important result,by changing the chemical potential of the NM spacer and magnetizationdirections, one can control all components of the STT. Interestingly, both theresonance spin current and the resonance spin-transfer torque appear forenergies determined from a resonance equation. By increasing the chemicalpotential of the NM spacer, the amplitude of the STTs decreases while at largechemical potentials of $\mu_N$ there are intervals of chemical potential inwhich both the spin current and the spin-transfer torque become zero. Thesefindings could open new perspectives for applications in spin-transfer torquemagnetic random access memory (STT-MRAM) devices based on TI.

Resonance spin transfer torque in ferromagnetic/normal/ferromagnetic spin-valve structure of topological insulators