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The influence of He+ ion irradiation on the transport and magnetic propertiesof epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, atwo-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor hasbeen investigated. In all layers, a conductivity type conversion from theinitial n-type to the ptype has been found. The ion fluence at which theconversion occurs depends on the Fe concentration in the InSb matrix.Magnetotransport properties of the two-phase (In,Fe)Sb layer are stronglyaffected by ferromagnetic Fe inclusions. An influence of the number ofelectrically active radiation defects on the magnetic properties of thesingle-phase In0.75Fe0.25Sb DMS has been found. At the same time, the resultsshow that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistantto significant changes of the charge carrier concentration and the Fermi levelposition. The results confirm a weak interrelation between the ferromagnetismand the charge carrier concentration in (In,Fe)Sb.

Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position