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We reveal the nature of transport and ferromagnetic properties of the GaAsstructure with the single Mn {\delta}-doped layer. To modify the properties ofthe structure the electrically active radiation defects are created byirradiation with helium ions. The investigations show that the transportproperties of the structure are determined by two parallel conduction channels(the channel associated with hole transport in the valence band and the channelassociated with electron transport in the Mn impurity band) and that theferromagnetic properties are determined by the electrons localized at theallowed states within the Mn impurity band. The results also help to understandthe features of structures with the Mn {\delta}-layer nearby the quantum well.

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn {\delta}-doped layer