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Spin-valley transport and magnetoresistance are investigated insilicene-based N/TB/N/TB/N junction where N and TB are normal silicene andtopological barriers. The topological phase transitions in TB's are controlledby electric, exchange fields and circularly polarized light. As a result, wefind that by applying electric and exchange fields, four groups of spin-valleycurrents are perfectly filtered, directly induced by topological phasetransitions. Control of currents, carried by single, double and triple channelsof spin-valley electrons in silicene junction, may be achievable by adjustingmagnitudes of electric, exchange fields and circularly polarized light. We mayidentify that the key factor behind the spin-valley current filtered at thetransition points may be due to zero and non-zero Chern numbers. Electrons thatare allowed to transport at the transition points must obey zero-Chern numberwhich is equivalent to zero mass and zero-Berry's curvature, while electronswith non-zero Chern number are perfectly suppressed. Very largemagnetoresistance dips are found directly induced by topological phasetransition points. Our study also discusses the effect of spin-valley dependentHall conductivity at the transition points on ballistic transport and revealsthe potential of silicene as a topological material for spin-valleytronics.

Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene