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Among Heusler compounds, the ones being magnetic semiconductors (also knownas spin-filter materials) are widely studied as they offer novelfunctionalities in spintronic/magnetoelectronic devices. The spin-gaplesssemiconductors are a special case. They possess a zero or almost-zero energygap in one of the two spin channels. We employ the $GW$ approximation, whichallows an elaborate treatment of the electronic correlations, to simulate theelectronic band structure of these materials. Our results suggest that in mostcases the use of $GW$ self energy instead of the usual density functionals isimportant to accurately determine the electronic properties of magneticsemiconductors.

A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compounds