English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the zaia usage as premium feature

ZAIA

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the access of premium content as premium feature

Premium Content

Zendy Tools

Zendy Open

STM based magnetotransport measurements of epitaxialLa$_{0.7}$Sr$_{0.3}$MnO$_3$ 32 nm thick films with and without an internalLaMnO$_3$ layer (0-8 nm thick) grown on Nb doped SrTiO$_3$ are presented. Themeasurements reveal two types of low field magnetoresistance (LFMR) with amagnitude of $\sim 0.1-1.5\%$. One LFMR contribution is identified as aconventional grain boundary/domain wall scattering through the symmetric I-Vcharacteristics, high dependence on tip placements and insensitivity tointroduction of LaMnO$_3$ layers. The other contribution originates from thereverse biased Nb doped SrTiO$_3$ interface and the interface layer ofLa$_{0.7}$Sr$_{0.3}$MnO$_3$. Both LFMR contributions display a field dependenceindicative of a higher coercivity ($\sim$200 Oe) than the bulk film. LaMnO$_3$layers are found to reduce the rectifying properties of the junctions, and submicron lateral patterning by electron beam lithography enhances the diodicproperties, in accordance with a proposed transport model based on the localityof the injected current.

Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$