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We have investigated the domain wall resistance for two types of domain wallsin a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positiveintrinsic DWR is inferred for domain walls that are pinned at an etching step,which is quite consistent with earlier observations. However, much lowerintrinsic domain wall resistance is obtained when domain walls are formed bypinning lines in unetched material. This indicates that the spin transportacross a domain wall is strongly influenced by the nature of the pinning.

Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning