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We present an extended study of single impurity atoms at the interfacebetween the half-metallic ferromagnetic zinc-blende CrAs compound and thezinc-blende binary InAs and CdSe semiconductors in the form of very thinmultilayers. Contrary to the case of impurities in the perfect bulk CrAsstudied in [I. Galanakis and S.G. Pouliasis, J. Magn. Magn. Mat. 321 (2009)1084] defects at the interfaces do not alter in general the half-metalliccharacter of the perfect systems. The only exception are Void impurities at Cror In(Cd) sites which lead, due to the lower-dimensionality of the interfaceswith respect to the bulk CrAs, to a shift of the $p$ bands of the nearestneighboring As(Se) atom to higher energies and thus to the loss of thehalf-metallicity. But Void impurities are Schottky-type and should exhibit highformation energies and thus we expect the interfaces in the case of thinmultilayers to exhibit a robust half-metallic character.

Role of defects on the electronic and magnetic properties of CrAs/InAs and CrAs/CdSe half-metallic interfaces