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This paper describes a numerical experiment of magnetization switching drivenby spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%).Differently from other works, the current density distribution throughout thecross-sectional area of the free-layer is here computed dinamically, bymodeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallelresistances. The validity of the main postulated hypothesis, which states thatthe current density vector is perpendicular to the sample plane, has beenverified by numerically solving the Poisson equation. Our results show that thenonuniform current density distribution is a source of asymmetry for theswitching. Furthermore, we found out that the switching processes arecharacterized by well defined localized pre-switching oscillation modes.

Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions