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Photoluminescence, thermally stimulated luminescence (TSL) and EPRcharacteristics of the Ce3+ doped single crystals of multicomponentY1Lu2GaxAl5-xO12 and Lu3GaxAl5-xO12 garnets with different Ga contents (x = 0,1, 2, 3, 4, 5) excited in the Ce3+ - related absorption bands are investigatedin the 9 - 500 K temperature range. The distribution of Ga3+ and Al3+ ions inthe crystal lattice is determined by the NMR method. The relative number ofGa3+ ions in the tetrahedral crystal lattice sites, the maxima positions of theTSL glow curve peaks and the corresponding trap depths are found to decreaselinearly with the increasing Ga content. At the same time, the reduction of theactivation energy Ea of the TSL glow curve peaks creation under irradiation inthe 4f - 4d1 absorption band of Ce3+ is strongly nonlinear. To explain thiseffect, the suggestion is made that Ea is the energy distance between theexcited 5d1 level of Ce3+ and a defect level located between the 5d1 level andthe bottom of the conduction band and arising from the Ga3+ ion perturbed bythe nearest neighboring Ce3+ ion. The electrons thermally released from theexcited Ce3+ ions are suggested to be trapped at the perturbed Ga3+ ionsresulting in the appearance of electron Ga2+ centers. In spite of the fact thatthe paramagnetic Ga2+ ions were not detected by EPR, the described aboveprocess was found for Fe3+ impurity ions, namely the electron transfer from the5d1 excited levels of Ce3+ to Fe3+ was directly detected by EPR.

journal of luminescence

Influence of gallium content on Ga3+ position and photo- and thermally  stimulated luminescence in Ce3+ - doped multicomponent (Y,Lu,)3GaxAl5-xO12  garnets