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Nonradiative exciton lifetime in silicon is determined by comparison of theexperimental and theoretical curves of bulk minority charge carriers lifetimeon doping and excitation levels. This value is used to analyze the influence ofexcitonic effects on internal luminescence quantum yield at room temperature,taking into account both nonradiative and radiative exciton lifetimes. A rangeof Shockley-Hall-Reed lifetimes is found, where excitonic effects lead to anincrease of internal luminescence quantum yield.

Influence of excitonic effects on luminescence quantum yield in silicon