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We study the photoluminescence spectra of n-doped InP bulk wafers, both inthe reflection and the transmission geometries relative to the excitation beam.From the observed spectra we estimate the spatial distribution of minoritycarriers allowing for the spectral filtering due to re-absorption ofluminescence in the wafer. This distribution unambiguously demonstrates anon-exponential drop-off with distance from the excitation region. Such abehavior evidences an anomalous photon-assisted transport of minority carriersenhanced owing to the high quantum efficiency of emission. It is shown that thetransport conforms very well to the so-called Levy-flights processcorresponding to a peculiar random walk that does not reduce to diffusion. Theindex gamma of the Levy flights distribution is found to be in the range gamma= 0.64 to 0.79, depending on the doping. Thus, we propose the high-efficiencydirect-gap semiconductors as a remarkable laboratory system for studying theanomalous transport.

Photon assisted Levy flights of minority carriers in n-InP