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We report the successful growth of high-quality SrO films on highly-orderedpyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy.The SrO layers have (001) orientation as confirmed by x-ray diffraction (XRD)while atomic force microscopy measurements show continuous pinhole-free filmshaving rms surface roughness of <1.5 {\AA}. Transport measurements ofexfoliated graphene after SrO deposition show a strong dependence between theDirac point and Sr oxidation. Subsequently, the SrO is leveraged as a bufferlayer for more complex oxide integration via the demonstration of (001)oriented SrTiO3 grown atop a SrO/HOPG stack.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides