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We provide evidence that gallium purity is the primary impediment toattainment of ultra-high mobility in a two-dimensional electron gas (2DEG) inAlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE). The purityof gallium can be enhanced dramatically by in-situ high temperature outgassingwithin an operating MBE. Based on analysis of data from an initial growthcampaign in a new MBE system and modifications employed for a 2nd growthcampaign, we have produced 2DEGs with low temperature mobility in excess of35x10^6cm2/Vs at density n=3.0x10^11/cm2 and mobility 18x10^6cm2/Vs atn=1.1x1011/cm2. Our 2nd campaign data indicate that gallium purity remains thefactor currently limiting mobility <40x10^6cm2/Vs. We describe strategies toovercome this limitation.

journal of crystal growth

Modified MBE hardware and techniques and role of gallium purity for  attainment of two dimensional electron gas mobility >35 x10^6 cm^2/Vs in  AlGaAs/GaAs quantum wells grown by MBE