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Gallium nitride nanowires were grown on c-plane, r-plane and m-plane sapphiresubstrates in a showerhead metalorganic chemical vapor deposition system usingnickel catalyst with trimethylgallium and ammonia as precursors. We studied theinfluence of carrier gas, growth temperature, reactor pressure, reactant flowrates and substrate orientation in order to obtain thin nanowires. Thenanowires grew along the <10-11> and <10-10> axes depending on the substrateorientation. These nanowires were further characterized using x-raydiffraction, electron microscopy, photoluminescence and Raman spectroscopy.

Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates