English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Many challenges faced in today's semiconductor devices are related toself-heating phenomena. The optimization of device designs can be assisted bynumerical simulations using the non-isothermal drift-diffusion system, wherethe magnitude of the thermoelectric cross effects is controlled by the Seebeckcoefficient. We show that the model equations take a remarkably simple formwhen assuming the so-called Kelvin formula for the Seebeck coefficient. Thecorresponding heat generation rate involves exactly the three classically knownself-heating effects, namely Joule, recombination and Thomson-Peltier heating,without any further (transient) contributions. Moreover, the thermal drivingforce in the electrical current density expressions can be entirely absorbed inthe diffusion coefficient via a generalized Einstein relation. The efficientnumerical simulation relies on an accurate and robust discretization techniquefor the fluxes (finite volume Scharfetter-Gummel method), which allows to copewith the typically stiff solutions of the semiconductor device equations. Wederive two non-isothermal generalizations of the Scharfetter-Gummel scheme fordegenerate semiconductors (Fermi-Dirac statistics) obeying the Kelvin formula.The approaches differ in the treatment of degeneration effects: The first isbased on an approximation of the discrete generalized Einstein relationimplying a specifically modified thermal voltage, whereas the second schemefollows the conventionally used approach employing a modified electric field.We present a detailed analysis and comparison of both schemes, indicating asuperior performance of the modified thermal voltage scheme.

journal of computational physics

Generalized Scharfetter-Gummel schemes for electro-thermal transport in  degenerate semiconductors using the Kelvin formula for the Seebeck  coefficient