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Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layersincreased needs for precise, non-destructive, and relatively fastcharacterization methods with key issues being the macroscopic lateral Mndistribution and the absolute values of Mn concentration x. We report onresonantly enhanced UV Raman scattering studies of high quality Ga1-xMnxNlayers grown on GaN templated sapphire by molecular beam epitaxy with 4 < x <9%. The main advantage of the UV excitation is the restriction of the lightpenetration depth to nearly a hundred nanometers, eliminating signal from theGaN buffer. Under this conditions we determine the dependence of the 1LO phononfrequency on x, what allows for a fine mapping of its lateral distribution overthe entire surface of the samples. Our Raman scanning clearly confirmssubstantial lateral distribution of Mn atoms across the layer, which is radialwith respect to its center. From the established distributions in twodeliberately chosen layers the magnitude of the optimal growth temperature formost efficient Mn atoms incorporation in epitaxial GaN has been confirmed. Itis shown that the combination of the 1LO line width and its energy providesassessment of the crystalline quality of the investigated layers.

Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers