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Schottky barrier height and the ideality factor $\eta$ are established forthe first time in the single phase (Ga,Mn)N using a vertical geometry device.The material has been heteroepitaxially grown on commercially available lowthreading dislocation density GaN:Si template. The observed above 10M$\Omega$resistances already at room temperature are indicative that a nearlyconductive-dislocation-free electrical properties are achieved. The analysis oftemperature dependence of the forward bias I-V characteristics in the frame ofthe thermionic emission model yields Ti-(Ga,Mn)N Schottky barrier height to beslightly lower but close in character to other metal/GaN junctions. However,the large magnitudes of the ideality factor $\eta$>1.5 for T$\leqslant$300K,point to a sizable current blocking in the structure. While it remains to beseen whether it is due to the presence of (Ga,Mn)N barrier or due to otherfactors which reduce the effective area of the junction, an existence of asubstantial serial resistance may hold the key to explain similar observationsin other devices of a corresponding structure and technological relevance.

Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire