English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Open

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Possible existence of topologically protected surface in samarium hexaboridehas created a strong need for investigations allowing to distinguish betweenproperties coming from the surface states and those originating in the(remaining) bulk. Studies of SmB6 thin films represent a favorable approachallowing well defined variations of the bulk volume that is not affected bysurface states. Moreover, thin films are highly desirable for potentialtechnology applications. However, the growth of SmB6 thin films is accompaniedby technology problems, which are typically associated with maintaining thecorrect stoichiometry of samarium and boron. Here we present feasibility studyof SmB6 thin film synthesis by pulsed laser deposition (PLD) from a singlestoichiometric SmB6 target. As proved by Rutherford Backscattering Spectrometry(RBS), we succeeded to obtain the same ratio of samarium and boron in the filmsas that in the target. Thin films revealing characteristic electricalproperties of (crystalline) SmB6 were successfully deposited on MgO, sapphire,and glass-ceramics substrates, when the substrates were kept at temperature of600$^\circ$ C during the deposition. Performed electrical resistance studieshave revealed that bulk properties of the films are only slightly affected bythe substrate. Our results indicate that PLD is a suitable method for complexand intensive research of SmB6 and similar systems.

Electrical properties of SmB$_6$ thin films prepared by pulsed laser deposition from a stoichiometric SmB$_6$ target