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A comparative study of the structural, microstructural and magneticproperties of CrO$_2$ thin films grown onto (110) and (100) TiO$_2$ rutilesingle crystal substrates by chemical vapor deposition (CVD), using CrO$_3$ aschromium precursor and either oxygen or argon as carrier gas is presented. Ourresults show that growth under argon carrier gas leads to high quality CrO$_2$epilayers with structural and magnetic properties similar to those obtainedusing the more standard oxygen carrier gas. Furthermore, we interpret thelarger magnetic coercivity observed for the (110) oriented films in terms oftheir microstructure, in particular of the highest strain and edge roughness ofthe building structures of the CrO$_2$ epilayers, which are settled by thesubstrate crystallographic orientation.

Argon assisted chemical vapor deposition of CrO$_2$: an efficient process leading to high quality epitaxial films