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Here, we examine the influence of surface chemical reactivity toward ambientgases on the performance of nanodevices based on two-dimensional materials"beyond graphene" and novel topological phases of matter. While surfaceoxidation in ambient conditions was observed for silicene and phosphorene withsubsequent reduction of the mobility of charge carriers, nanodevices withactive channels of indium selenide, bismuth chalcogenides and transition-metaldichalcogenides are stable in air. However, air-exposed indium selenide suffersof p-type doping due to water decomposition on Se vacancies, whereas the lowmobility of charge carriers in transition-metal dichalcogenides increases theresponse time of nanodevices. Conversely, bismuth chalcogenides require acontrol of crystalline quality, which could represent a serious hurdle for upscaling.

flatchem

The role of surface chemical reactivity in the stability of electronic  nanodevices based on two-dimensional materials "beyond graphene" and  topological insulators