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SnTe is a prototypical topological crystalline insulator, in which thegapless surface state is protected by a crystal symmetry. The hallmark of thetopological properties in SnTe is the Dirac cones projected to the surfaceswith mirror symmetry, stemming from the band inversion near the L points of itsbulk Brillouin zone, which can be measured by angle-resolved photoemission. Wehave obtained the (111) surface of SnTe film by molecular beam epitaxy onBaF2(111) substrate. Photon-energy-dependence of in situ angle-resolvedphotoemission, covering multiple Brillouin zones in the direction perpendiculartothe (111) surface, demonstrate the projected Dirac cones at the Gamma_bar andM_bar points of the surface Brillouinzone. In addition, we observe aDirac-cone-like band structure at the Gamma point of the bulk Brillouinzone,whose Dirac energy is largely different from those at the Gamma_bar andM_bar points.

ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)