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Auger analysis of high-aspect ratio contact holes of integratedmicroelectronic devices is a challenging analytical task. Due to geometricalshadowing the primary electron beam and the energy analyser have not therequired direct line of sight to the analysis area simultaneously. To solvethis problem sample preparation is needed to flatten the 3-dimensionalgeometry. Here the new approach of in-situ low-angle cross sectioning isapplied. By this method material gets removed inside the Auger instrument whilethe sample is sputtered by Ar+ ions at nearly grazing incidence utilizing theedge of a mask, which partly covers the sample. A very shallow bevel withrespect to the sample surface is produced. Thus along the bevel contact holeswith suitable aspect ratios are available for the Auger analysis.

Reducing the Aspect Ratio of Contact Holes by In-Situ Low-Angle Cross Sectioning