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The occupancy of the 4f^n contributions in the Kondo semiconductorsCeM2Al10(M = Ru, Os and Fe) has been quantitatively determined by means ofbulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) on the Ce 3d corelevels. Combining a configuration interaction scheme with full multipletcalculations allowed to accurately describe the HAXPES data despite thepresence of strong plasmon excitations in the spectra. The configurationinteraction parameters obtained from this analysis -- in particular thehybridization strength V_eff and the effective f binding energy Delta_f --indicate a slightly stronger exchange interaction in CeOs2Al10 compared toCeRu2Al10, and a significant increase in CeFe2Al10. This verifies thecoexistence of a substantial amount of Kondo screening with magnetic order andplaces the entire CeM2Al10 family in the region of strong exchangeinteractions.

journal of electron spectroscopy and related phenomena

Quantitative study of valence and configuration interaction parameters  of the Kondo semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of  bulk-sensitive hard x-ray photoelectron spectroscopy