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In this work we introduce the use of TiN/Ti2 N layers as a back contact forlifted-off membranes of anodic Ta3N5 nanotube layers. In photoelectrochemicalH2 generation experiments under simulated AM 1.5G light, shift of the onsetpotential for anodic photocurrents to lower potentials is observed, as well asa higher magnitude of the photocurrents compared to conventional Ta3N5nanotubes (~ 0.5 V RHE ). We ascribe this beneficial effect to the improvedconductive properties of the TiNx -based back contact layer that enables afacilitated electron-transport for tantalum-nitride based materials to theconductive substrate.

Tantalum nitride nanotube photoanodes: establishing a beneficial back-contact by lift-off and transfer to titanium nitride layer