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Role of pH of the precursor solution on structural, morphological, electrical and optical properties was investigated, for SnS films prepared using chemical spray pyrolysis (CSP) technique. From the study we could understand that optimum pH of the precursor solution to obtain device quality SnS thin film is 2. The resistivity of SnS films has been brought down by three orders to 6×10-2Ωcm with considerable enhancement in the crystallinity as well as photosensitivity at this optimum pH. Band gap of the films could also be engineered by controlling the pH of the precursor solution. Arrangement of needle-like grains in the film turns out to be denser and is evident from SEM analysis

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Engineering Structural and Opto-Electronic Properties of SnS Films Deposited using Chemical Spray Pyrolysis Technique by Controlling pH of the Precursor Solution