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In this work, an alternative approach for CIGS thin film growth has been tested, which is different from the common co-evaporation process. Such approach consists of sputtering deposition of the metal elements combined with selenium evaporation. This new and easily scalable procedure allows deposition time of the CIGS layer lower than 15minutes and can be easily applied not only on rigid but also on flexible substrates in a roll to roll configuration, matching industrial application requirements. The relationships between the growth parameters of such hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films and cells have been studied

Hybrid sputtering/evaporation deposition of Cu(In,Ga)Se2 thin film solar cells