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Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28μm thickness at dynamic deposition rates of 20μm×m/min on locally laser-ablated Al2O3 / SiNx passivation layers. Due to the high substrate temperature of up to 778°C during deposition an Al-doped p+ region is formed. Using the camera-based dynamic infrared lifetime mapping technique we determine a contact recombination velocity of 1000±100cm/s for local Al-p+ regions on p-type silicon wafers of 1.5Ωcm resistivity. The recombination velocity between the contacts is determined to 4.4±0.5cm/s after deposition

Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation