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The controlled creation of color centers in phosphorus-doped (n-type) diamondcan facilitate the electronics integration of quantum photonics devices, suchas single-photon sources operating upon electrical injection. Silicon vacancy(SiV) color centers are promising candidates, but so far the conditions forsingle-photon emission in phosphorus-doped diamond have not been investigated.In this study, we create SiV color centers in diamond samples with differentphosphorus concentrations and show that the fluorescence background due todoping, nitrogen-impurities and ion implantation induced defects can besignificantly suppressed. Single-photon emitters in phosphorus-doped diamondare obtained at the low Si-ion implantation fluences.

Silicon-vacancy color centers in phosphorus-doped diamond