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We have prepared a series of (FeSe0.5Te0.5 + xGd) bulk samples, with x = 0,0.03, 0.05, 0.07, 0.1 and 0.2, through the convenient solid-state reactionmethod at ambient pressure (CSP). High gas pressure and high-temperaturesynthesis methods (HP-HTS) are also applied to grow the parent compound (x = 0)and 5-wt% of Gd-added bulks. Structural, microstructural, transport andmagnetic characterizations have been performed on these samples in order todraw the final conclusion. Our analysis results that the HP-HTS applied for theparent compound enhances the transition temperature (Tc) and the criticalcurrent density (Jc) with the improved sample density and intergrainconnections. The lattice parameter c is increased with Gd additions, suggestinga small amount of Gd enters the tetragonal lattice of FeSe0.5Te0.5 and the Gdinterstitial sites are along the c-axis. A systematic decrease of the onsettransition temperature Tc is observed with Gd additions, however, thecalculated Jc of these Gd-added samples is almost the same as that of theparent compound prepared by CSP. It specifies that there is no improvement ofthe grain connections or pinning properties due to these rare earth additions.However, Gd-added FeSe0.5Te0.5 bulks prepared by HP-HTS have revealed aslightly improved critical current density due to improved grain connectionsand sample density but have a lower transition temperature than that of theparent compounds.

Comparison of Gd addition effect on the superconducting properties of FeSe0.5Te0.5 bulks under ambient and high-pressure conditions