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Graphene nanoribbons (GNRs) are atomically precise stripes of graphene withtunable electronic properties, making them promising for room-temperatureswitching applications like field-effect transistors (FETs). However,challenges persist in GNR processing and characterization, particularlyregarding GNR alignment during device integration. In this study, wequantitatively assess the alignment and quality of 9-atom-wide armchairgraphene nanoribbons (9-AGNRs) on different substrates using polarized Ramanspectroscopy. Our approach incorporates an extended model that describes GNRalignment through a Gaussian distribution of angles. We not only extract theangular distribution of GNRs but also analyze polarization-independentintensity contributions to the Raman signal, providing insights into surfacedisorder on the growth substrate and after substrate transfer. Our findingsreveal that low-coverage samples grown on Au(788) exhibit superior uniaxialalignment compared to high-coverage samples, attributed to preferential growthalong step edges, as confirmed by scanning tunneling microscopy (STM). Uponsubstrate transfer, the alignment of low-coverage samples deteriorates,accompanied by increased surface disorder. On the other hand, high-coveragesamples maintain alignment and exhibit reduced disorder on the targetsubstrate. Our extended model enables a quantitative description of GNRalignment and quality, facilitating the development of GNR-based nanoelectronicdevices.

Quantifying Alignment and Quality of Graphene Nanoribbons: A Polarized Raman Spectroscopy Approach