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By combining scanning probe microscopy with Raman and x-ray photoelectronspectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as afunction of the deposition temperature in close proximity to the Ge meltingpoint, highlighting an abrupt change of the graphene's quality, morphology,electronic properties and growth mode at 930 degrees. We attribute thisdiscontinuity to the incomplete surface melting of the Ge substrate and showhow incomplete melting explains a variety of diverse and long-debated peculiarfeatures of the graphene/Ge(001), including the characteristic nanostructuringof the Ge substrate induced by graphene overgrowth. We find that thequasi-liquid Ge layer formed close to 930 degrees is fundamental to obtainhigh-quality graphene, while a temperature decrease of 10 degrees alreadyresults in a wrinkled and defective graphene film.

Abrupt changes in the graphene on Ge(001) system at the onset of surface melting