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Since lattice strain and charge density affect various material properties ofgraphene, a reliable and efficient method is required for quantification of thetwo variables. While Raman spectroscopy is sensitive and non-destructive, itsvalidity towards precise quantification of chemical charge doping has not beentested. In this work, we quantified in-situ the fractional frequency change of2D and G peaks in response of charge density induced by sulfuric acid solutionas well as native lattice strain. Based on the experimental data andtheoretical corroboration, we presented an optical method that simultaneouslydetermines strain and chemically-induced charge density for three popularexcitation wavelengths of 457, 514 and 633 nm. In order to expediteintercalation of dopant species through the graphene-SiO2 substrates, densearrays of nanopores were precisely generated in graphene by thermal oxidation.The nano-perforated graphene membrane system was robust for multiple cycles ofdoping and undoping processes, and will be useful in studying various types ofchemical interactions with graphene.

Reversible Sulfuric Acid Doping of Graphene Probed by in-situ Multi-Wavelength Raman Spectroscopy