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In recent years, various doping methods for epitaxial graphene have beendemonstrated through atom substitution and adsorption. Here we observe byangle-resolved photoemission spectroscopy (ARPES) a coupling-induced Dirac conerenormalization when depositing small amounts of Ti onto epitaxial graphene onSiC. We obtain a remarkably high doping efficiency and a readily tunablecarrier velocity simply by changing the amount of deposited Ti.First-principles theoretical calculations show that a strong lateral(non-vertical) orbital coupling leads to an efficient doping of graphene byhybridizing the 2pz orbital of graphene and the 3d orbitals of the Tiadsorbate, which attached on graphene without creating any trap/scatteringstates. This Ti-induced hybridization is adsorbate-specific and has majorconsequences for efficient doping as well as applications towardsadsorbate-induced modification of carrier transport in graphene.

Efficient n-type Doping in Epitaxial Graphene through Strong Lateral Orbital Hybridization of Ti Adsorbate