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Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaicdevices thanks to their wide direct bandgap energy that covers the solarspectrum from 0.7 eV (InN) to 6.2 eV (AlN), and their superior resistance tohigh temperatures and high-energy particles. In this paper, we report thedesign of AlInN on silicon heterojunctions, with the aim to explore theirpotential for solar cell devices through the analysis and optimization of theproperties of the AlInN on Si heterojunction. In particular, we study theinfluence of the AlInN bandgap energy, AlInN thickness and carrierconcentration, silicon surface recombination, interface defects and Si waferquality on the photovoltaic properties (conversion efficiency and externalquantum efficiency) of the AlInN on Si heterojunctions. The effect ofintroducing an anti-reflective coating is also studied. Optimized AlInN on Siheterostructure shows a conversion efficiency of 18% under 1-sun AM1.5Gillumination for low-quality Si wafers, which increases to 23.6% forhigh-quality Si wafers and incorporating a properly designed anti-reflectivelayer. In comparison with standard Si solar cells without AlInN, the externalquantum efficient of the devices increases for wavelengths below 500 nm, makingthem appealing for space applications. These results lead to the AlInN on Siheterojunction a promising future as a novel technology for solar cell devices.

Design of n-AlInN on p-silicon heterojunction solar cells