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The functional properties of devices based on perovskite oxides dependstrongly on the growth modes that dramatically affect surface morphology andmicrostructure of the hetero-structured thin films. To achieve atomically flatsurface morphology, which is usually a necessity for the high quality devices,understanding of the growth mechanism of heteroepitaxial thin film isindispensable. In this study, we explore heteroepitaxial growth kinetics of theSrRuO3 using intermittent growth scheme of pulsed laser epitaxy and ex-situatomic force microscopy. Two significant variations in surface roughness duringdeposition of the first unit cell layer were observed from atomic forcemicroscopy indicating the possible formation of the half unit cell of theSrRuO3 before the complete formation of the first unit cell. In addition,layer-by-layer growth mode dominated during the first two unit cell layerdeposition of the SrRuO3 thin film. Our observation provides underlying growthmechanism of the heteroepitaxial SrRuO3 thin film on the SrTiO3 substrateduring the initial growth of the thin film.

Ex-situ atomic force microscopy on the growth mode of SrRuO3 epitaxial thin film