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Using first-principles calculations, we study the structural and electronicproperties of the bilayer SnS/graphene, bilayer SnS/bilayer graphene(AA-stacked), bilayer SnS/bilayer graphene (AB-stacked) and monolayerSnS/graphene/monolayer SnS van der Waals (vdW) heterostructures. Electronicproperties of all components of the vdW heterostructures are well preserved,which reflects the weakness of the vdW interaction. In the cases of bilayerSnS/graphene and bilayer SnS/bilayer graphene (AA-stacked), an Ohmic contact isformed which can be turned first into p-type and then into n-type Schottkycontacts via application of an external electric field. Calculations show thatan Ohmic contact is also formed at the interface of bilayer SnS/bilayergraphene (AB-stacked) heterostructure, but interestingly, by applying theperpendicular electric field a transition from semimetal/semiconductor contactto semiconductor/semiconductor one occurs which can enhance its opticalproperties. Alternatively, in the monolayer SnS/graphene/monolayer SnS vdWheterosructure, a p-type Schottky contact is established that changes intoOhmic contact under an applied electric field. Our results clearly indicatethat the electronic properties of the vdW heterostructures can be tunedefficiently by external electric field, which is important in designing of newnanoelectronic devices.

Tuning electronic properties and contact type in van der Waals heterostructures of bilayer SnS and graphene