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We use angle-resolved photoemission spectroscopy to investigate theelectronic structure of bilayer graphene at high n-doping and extremedisplacement fields, created by intercalating epitaxial monolayer graphene onsilicon carbide with magnesium to form quasi-freestanding bilayer graphene onmagnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopyreveals that upon magnesium intercalation, the single massless Dirac band ofepitaxial monolayer graphene is transformed into the characteristic massivedouble-band Dirac spectrum of quasi-freestanding bilayer graphene. Analysis ofthe spectrum using a simple tight binding model indicates that magnesiumintercalation results in an n-type doping of 2.1 $\times$ 10$^{14}$ cm$^{-2}$,creates an extremely high displacement field of 2.6 V/nm, opening aconsiderable gap of 0.36 eV at the Dirac point. This is further confirmed bydensity-functional theory calculations for quasi-freestanding bilayer grapheneon magnesium-terminated silicon carbide, which show a similar doping level,displacement field and bandgap. Finally, magnesium-intercalated samples aresurprisingly robust to ambient conditions; no significant changes in theelectronic structure are observed after 30 minutes exposure in air.

Magnesium-intercalated graphene on SiC: highly n-doped air-stable bilayer graphene at extreme displacement fields