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Superconducting Nb3Sn films were fabricated on sapphire and fine grain Nbsubstrates by magnetron sputtering from a single stoichiometric Nb3Sn target.The structural, morphological and superconducting properties of the filmsannealed for 24 h at temperatures of 800-1000 {\deg}C were investigated. Theeffect of the annealing time at 1000 {\deg}C was examined for 1, 12, and 24 h.The film properties were characterized by X-ray diffraction, scanning electronmicroscopy, atomic force microscopy, energy dispersive X-ray spectroscopy, andRaman spectroscopy. The DC superconducting properties of the films werecharacterized by a four-point probe measurement down to cryogenic temperatures.The RF surface resistance of films was measured over a temperature range of6-23 K using a 7.4 GHz sapphire-loaded Nb cavity. As-deposited Nb3Sn films onsapphire had a superconducting critical temperature of 17.21 K, which improvedto 17.83 K when the film was annealed at 800 {\deg}C for 24 h. For the filmsannealed at 1000 {\deg}C, the surface Sn content was reduced to ~11.3 % for anannealing time of 12 h and to ~4.1 % for an annealing time of 24 h. The Ramanspectra of the films confirmed the microstructural evolution after annealing.The RF superconducting critical temperature of the as-deposited Nb3Sn films onNb was 16.02 K, which increased to 17.44 K when the film was annealed at 800{\deg}C for 24 h.

Properties of Nb3Sn films fabricated by magnetron sputtering from a single target