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Recent advances in two-dimensional (2D) crystals make it possible to realizean ideal interface structure that is required for device applications.Specifically, a p-n junction made of 2D crystals is predicted to exhibit anatomically well-defined interface that will lead to high device performance.Using angle-resolved photoemission spectroscopy, a simple surface treatment wasshown to allow the possible formation of such an interface. Ta adsorption onthe surface of a p-doped SnSe shifts the valence band maximum towards higherbinding energy due to the charge transfer from Ta to SnSe that is highlylocalized at the surface due to the layered structure of SnSe. As a result, thecharge carriers of the surface are changed from holes of its bulkcharacteristics to electrons, while the bulk remains as a p-type semiconductor.This observation suggests that the well-defined interface of a p-n junctionwith an atomically thin {\it n}-region is formed between Ta-adsorbed surfaceand bulk.

A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping