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Two-dimensional materials such as transitional metal dichalcogenides exhibitunique optical and electrical properties. Here we report on the varying opticalproperties of CVD grown MoS2 monolayer flakes with different shapes. Inparticular, it is observed that the perimeter and the central region of theflakes have non-uniform photoluminescence (PL) energy and intensity. Wequantified these effects systematically and propose that thermally inducedstrain during growth is the origin. The strain relaxation after transfer of theMoS2 flakes supports this explanation. Detailed investigations of the spatialdistribution of the PL energy reveal that depending on the shape of the MoS2flakes, the width of the strain field is different. Thus, our results help toelucidate the fundamental mechanisms responsible for the differences in PL andRaman signals between the perimeter region and the center region of monolayerMoS2 and suggest that the induced strain plays an important role in the growthof monolayer materials.

Investigation of Growth-Induced Strain in Monolayer MoS2 Grown by Chemical Vapor Deposition