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We have investigated the temperature-dependent morphology and compositionchanges occurring during a controlled self-assembling of thin Au film on theGallium arsenide (001) surface utilizing electron microscopy at nano and atomiclevels. It has been found that the deposition of 2 ML of Au at a substratetemperature lower than 798 K leads to the formation of pure Au nanoislands. Forthe deposition at a substrate temperature of about 798 K the nanostructures ofthe stoichiometric AuGa phase were/had been grown. Gold deposition at highersubstrate temperatures results in the formation of octagonal nanostructurescomposed of an AuGa2 alloy. We have proved that the temperature-controlledefficiency of Au-induced etching-like of the GaAs substrate follows in alayer-by-layer manner leading to the enrichment of the substrate surface ingallium. The excess Ga together with Au forms liquid droplets which, whilecooling the sample to room temperature, crystallize therein developingcrystalline nanostructures of atomically-sharp interfaces with the substrate.The minimal stable cluster of 3 atoms and the activation energy for the surfacediffusion Ed=0.816+-0.038eV was determined. We show that by changing thetemperature of the self-assembling process one can control the phase, interfaceand the size of the nanostructures formed.

Nanostructure phase and interface engineering via controlled Au self-assembly on GaAs(001) surface