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An extended formation of faceted pit-like defects on Ge(001) and Ge(111)wafers was obtained by thermal cycles to T> 750 {\deg}C. This temperature rangeis relevant in many surface-preparation recipes of the Ge surface. The densityof the defects depends on the temperature reached, the number of annealingcycles performed and correlates to the surface-energy stability of the specificcrystal orientation. We propose that the pits were formed by preferentialdesorption from the strained regions around dislocation pile-ups. Indeed, themorphology of the pits was the same as that observed for preferential chemicaletching of dislocations while the spatial distribution of the pits was clearlynon-Poissonian in line with mutual interactions between the core dislocations.

Formation of extended thermal etch pits on annealed Ge wafers