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Liquid phase exfoliation followed by Langmuir-Blodgett self-assembly (LBSA)is a promising method for scalable production of thin graphene films fortransparent conductor applications. However, monolayer assembly into thin filmsoften induces a high density of defects, resulting in a large sheet resistancethat hinders practical use. We introduce UV/ozone as a novel photochemicaltreatment that reduces sheet resistance of LBSA graphene threefold, whilepreserving the high optical transparency. The effect of such treatment on ourfilms is opposite to the effect it has on mechanically exfoliated or CVD films,where UV/ozone creates additional defects in the graphene plane, increasingsheet resistance. Raman scattering shows that exposure to UV/ozone reduces thedefect density in LBSA graphene, where edges are the dominant defect type. FTIRspectroscopy indicates binding of oxygen to the graphene lattice duringexposure to ozone. In addition, work function measurements reveal that thetreatment dopes the LBSA film, making it more conductive. Such defect patchingpaired with doping leads to an accessible way of improving the transparentconductor performance of LBSA graphene, making solution-processed thin films acandidate for industrial use.

Reducing sheet resistance of self-assembled transparent graphene films by defect patching and doping with UV/ozone treatment