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We fabricate ion-gated field-effect transistors (iFET) on mechanicallyexfoliated multilayer MoS$_2$. We encapsulate the flake by Al$_2$O$_3$, leavingthe device channel exposed at the edges only. A stable Li$^+$ intercalation inthe MoS$_2$ lattice is induced by gating the samples with a Li-based polymericelectrolyte above $\sim$ 330 K and the doping state is fixed by quenching thedevice to $\sim$ 300 K. This intercalation process induces the emergence ofanomalies in the temperature dependence of the sheet resistance and its firstderivative, which are typically associated with structural/electronic/magneticphase transitions. We suggest that these anomalies in the resistivity ofMoS$_2$ can be naturally interpreted as the signature of a transition to acharge-density-wave phase induced by lithiation, in accordance with recenttheoretical calculations.

Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2