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Large hexagonal boron nitride (hBN) single-layer islands of high crystallinequality were grown on Ir(111) via chemical vapor deposition (CVD) and have beenstudied with low-energy electron microscopy (LEEM). Two types of hBN islandshave been observed that structurally differ in their shape and orientation withrespect to iridium, where the former greatly depends on the iridium stepmorphology. Photoemission electron microscopy (PEEM) and IV-LEEM spectroscopyrevealed that the two island types also exhibit different work functions andbindings to iridium, which provides an explanation for differences in theirshape and growth modes. In addition, various temperatures were used for the CVDsynthesis of hBN, and it was found that at temperatures higher than ~950{\deg}C boron atoms, originating either from decomposed borazine molecules ordisintegrated hBN islands, can form additional compact reconstructed regions.The presented results are important for advancement in synthesis ofhigh-quality hBN and other boron-based layered materials, and could thereforeexpedite their technological implementation.

Microanalysis of single-layer hexagonal boron nitride islands on Ir(111)