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In this report, it is shown that Cr doped into the bulk and Cr deposited onthe surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) havestrikingly different effects on both the electronic structure and chemicalenvironment.

Distinct Effects of Cr Bulk Doping and Surface Deposition on the Chemical Environment and Electronic Structure of the Topological Insulator Bi2Se3