English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

The Anode Hydrogen Release (AHR) mechanism at interfaces is responsible forthe generation of defects, that traps charge carriers and can induce dielectricbreakdown in Metal-Oxide-Semiconductor Field Effect Transistors. The AHR hasbeen extensively studied at Si/SiO$_2$ interfaces but its characteristics atmetal-silica interfaces remain unclear. In this study, we performed DensityFunctional Theory (DFT) calculations to study the hydrogen release mechanism atthe typical Al/SiO$_2$ metal-oxide interface. We found that interstitialhydrogen atoms can break interfacial Al-Si bonds, passivating a Si $sp^3$orbital. Interstitial hydrogen atoms can also break interfacial Al-O bonds, orbe adsorbed at the interface on aluminum, forming stable Al-H-Al bridges. Weshowed that hydrogenated O-H, Si-H and Al-H bonds at the Al/SiO$_2$ interfacesare polarized. The resulting bond dipole weakens the O-H and Si-H bonds, butstrengthens the Al-H bond under the application of a positive bias at the metalgate. Our calculations indicate that Al-H bonds and O-H bonds are moreimportant than Si-H bonds for the hydrogen release process.

Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO$_2$ interfaces